Predicaments in CW operation of silicon Raman lasers and amplifiers
نویسندگان
چکیده
We examine limitations of carrier removal with a p-n junction in Raman devices, namely, ineffectiveness at high optical intensities due to the applied field being screened, electrical heat dissipation, and the possibility of thermal instability. © 2006 Optical Society of America OCIS codes: (130.3120) Integrated optics devices, (190.4390) Nonlinear optics, integrated
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